Datasheet SI2301BDS-T1-E3 - Vishay MOSFET, P, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P, SOT-23

Download Data Sheet

Docket:
Si2301BDS
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V ID (A)b - 2.4 - 2.0

Specifications:

• Continuous Drain Current Id: -2.4 A
• Current Id Max: -2.2 A
• Device Marking: SI2301BDS
• Drain Source Voltage Vds: -20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 100 MOhm
• Package / Case: SOT-23
• Power Dissipation: 900 mW
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -950 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -20 V
• Voltage Vgs Max: -950 mV
• Voltage Vgs Rds on Measurement: -4.5 V

RoHS: Yes

Andere Namen:

SI2301BDST1E3, SI2301BDS T1 E3