Datasheet 2SK4013 - Toshiba MOSFET, N, 800 V, TO-220SIS — Datenblatt

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Manufacturer: Toshiba

Description: MOSFET, N, 800 V, TO-220SIS

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Docket:
2SK4013
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
2SK4013
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 640 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

• Continuous Drain Current Id: 6 A
• Drain Source Voltage Vds: 800 V
• Mounting Type: Through Hole
• On State Resistance: 1.7 Ohm
• Package / Case: TO-220SIS
• Power Dissipation Pd: 45 W
• Pulse Current Idm: 18 A
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-220SIS
• Transistor Polarity: N Channel
• Transistor Type: Switching
• Voltage Vds Typ: 800 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS