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SLPS261B – MARCH 2010 – REVISED SEPTEMBER 2014 CSD17309Q3 30-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Optimized for 5 V Gate Drive
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3 mm Г— 3.3 mm Plastic Package TA = 25В°C TYPICAL VALUE Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5 V) 7.5 nC Qgd Gate Charge Gate-to-Drain RDS(on)
VGS(th) This 30 V, 4.2 mО© NexFETв„ў power MOSFET is
designed to minimize losses in power conversion
applications and optimized for 5 V gate drive
applications. 4.9 VGS = 8 V 4.2 Threshold Voltage mΩ 1.2 V Device Media Qty Package Ship 13-Inch Reel 2500 CSD17309Q3T 7-Inch Reel 250 SON 3.3 × 3.3 mm
Plastic Package Tape and
Reel Absolute Maximum Ratings
TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 60 A Continuous Drain Current(1) 20 A IDM Pulsed Drain Current, TA = 25°C(2) 112 A PD Power Dissipation(1) 2.8 W TJ,
Tstg Operating Junction and …
