CSD17304Q3
www.ti.com SLPS258A – FEBRUARY 2010 – REVISED OCTOBER 2010 30V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17304Q3 PRODUCT SUMMARY FEATURES 1 2 Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3-mm Г— 3.3-mm Plastic Package The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
8 D S 2 7 D S D
G 5 4 5.1 nC Qgd Gate Charge Gate to Drain Drain to Source On Resistance 1.1 nC VGS = 3V 9.8 mΩ VGS = 4.5V 6.9 mΩ VGS = 8V 5.9 mΩ Threshold Voltage 1.3 V Device Package Media CSD17304Q3 SON 3.3-mm × 3.3-mm
Plastic Package 13-Inch
Reel Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage +10 / –8 V Continuous Drain Current, TC = 25°C 56 A Continuous Drain Current(1) 15 A IDM Pulsed Drain Current, TA = 25°C(2) 88 A PD Power Dissipation(1) 2.7 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, Single Pulse
ID = 42A, L = 0.1mH, RG = 25Ω 88 mJ ID (1) Typical RqJA = 46°C/W on a 1-inch2 (6.45-cm2),
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick …
