Datasheet TSM1N60CP - Taiwan Semiconductor MOSFET, N, 600 V, D-PAK — Datenblatt

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Manufacturer: Taiwan Semiconductor

Description: MOSFET, N, 600 V, D-PAK

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Docket:
TSM1N60
N-Channel Power Enhancement Mode MOSFET
Pin assignment: 1.

Gate 2. Drain 3. Source
VDS = 600V ID = 1A RDS (on), Vgs @ 10V, Ids @ 0.6A = 8
General Description

Specifications:

• Alternate Case Style: TO-252
• Application Code: GPSW
• Continuous Drain Current Id: 1 A
• Current Id Max: 1 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 600 V
• External Depth: 10.5 mm
• External Length / Height: 2.55 mm
• External Width: 6.8 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 8 Ohm
• On State Resistance: 8 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: DPAK
• Power Dissipation Pd: 50 W
• Pulse Current Idm: 9 A
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Typ: 21 ns
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Voltage Vgs th Min: 2 V

RoHS: Yes

Accessories:

• Fischer Elektronik - FK 244 08 D PAK
• Fischer Elektronik - FK 244 13 D PAK