Datasheet TK8A60DA(Q,M) - Toshiba MOSFET, N CH, 600 V, 7.5 A, SC-67 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: MOSFET, N CH, 600 V, 7.5 A, SC-67

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Docket:
TK8A60DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK8A60DA
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 0.8 (typ.) High forward transfer admittance: Yfs = 4.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

• Current Id Max: 7.5 A
• Drain Source Voltage Vds: 600 V
• Number of Pins: 3
• On State Resistance: 800 MOhm
• Power Dissipation Pd: 45 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SC-67
• Transistor Polarity: N Channel
• Voltage Vgs Max: 30 V

RoHS: Y-Ex

Accessories:

• AAVID THERMALLOY - 220SA
• AAVID THERMALLOY - BW50-2G
• ABL HEATSINKS - 205AB0500B
• GC ELECTRONICS - 10-8108

Andere Namen:

TK8A60DA(QM), TK8A60DA(Q M)