Datasheet TK6A60D(Q,M) - Toshiba MOSFET, N CH, 600 V, 6 A, SC-67 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: MOSFET, N CH, 600 V, 6 A, SC-67

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Docket:
TK6A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK6A60D
Switching Regulator Applications
· · · · Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

• Current Id Max: 6 A
• Drain Source Voltage Vds: 600 V
• Number of Pins: 3
• On State Resistance: 1 Ohm
• Power Dissipation Pd: 40 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SC-67
• Transistor Polarity: N Channel
• Voltage Vgs Max: 30 V

RoHS: Y-Ex

Accessories:

• AAVID THERMALLOY - 220SA
• AAVID THERMALLOY - BW50-2G
• ABL HEATSINKS - 205AB0500B
• GC ELECTRONICS - 10-8108

Andere Namen:

TK6A60D(QM), TK6A60D(Q M)