Datasheet TK60D08J1(Q) - Toshiba MOSFET, N CH, 75 V, 60 A, SC-67 — Datenblatt

Toshiba TK60D08J1(Q)

Part Number: TK60D08J1(Q)

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: MOSFET, N CH, 75 V, 60 A, SC-67

Docket:
TK60D08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS)
TK60D08J1
Switching Regulator Application
· · · · · · High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 75 V) Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

Current Id Max: 60 A
Drain Source Voltage Vds: 75 V
Number of Pins: 3
On State Resistance: 6.2 MOhm
Power Dissipation Pd: 140 W
Rds(on) Test Voltage Vgs: 10 V
Transistor Case Style: SC-67
Transistor Polarity: N Channel
Voltage Vgs Max: 20 V

RoHS: Y-Ex

Accessories:

AAVID THERMALLOY - 220SA
AAVID THERMALLOY - BW50-2G
ABL HEATSINKS - 205AB0500B
GC ELECTRONICS - 10-8108