Datasheet SIR426DP-T1-GE3 - Vishay MOSFET, N CH, 40 V, 30 A, PPAK SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, 40 V, 30 A, PPAK SO8

Download Data Sheet

Docket:
SiR426DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.0105 at VGS = 10 V 0.0125 at VGS = 4.5 V ID (A) 30a 30a Qg (Typ.) 9.3 nC

Specifications:

• Current Id Max: 30 A
• Drain Source Voltage Vds: 40 V
• Number of Pins: 8
• On State Resistance: 8.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 41.7 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SIR426DPT1GE3, SIR426DP T1 GE3