Datasheet SI9433BDY-T1-GE3 - Vishay MOSFET, P CH, 20 V, 4.5 A, 8SOIC — Datenblatt
Part Number: SI9433BDY-T1-GE3
Detaillierte Beschreibung
Manufacturer: Vishay
Description: MOSFET, P CH, 20 V, 4.5 A, 8SOIC
Docket:
Si9433BDY
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.040 at VGS = - 4.5 V 0.060 at VGS = - 2.7 V ID (A) - 6.2 - 5.0
Specifications:
- Current Id Max: -4.5 A
- Drain Source Voltage Vds: -20 V
- Number of Pins: 8
- On State Resistance: 30 MOhm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 1.3 W
- Rds(on) Test Voltage Vgs: -4.5 V
- Transistor Case Style: SOIC
- Transistor Polarity: P Channel
- Voltage Vgs Max: 12 V
RoHS: Yes
Andere Namen:
SI9433BDYT1GE3, SI9433BDY T1 GE3