Datasheet SI7456DP-T1-GE3 - Vishay MOSFET, N CH, 100 V, 5.7 A, PPAK SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, 100 V, 5.7 A, PPAK SO8

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Docket:
Si7456DP
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.025 at VGS = 10 V 0.028 at VGS = 6.0 V ID (A) 9.3 8.8

Specifications:

• Current Id Max: 5.7 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 8
• On State Resistance: 21 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.9 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SI7456DPT1GE3, SI7456DP T1 GE3