Datasheet SI7414DN-T1-GE3 - Vishay MOSFET, N, POWERPAK — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N, POWERPAK

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Docket:
Si7414DN
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
ID (A) 8.7 7.3

Simulation Model

Specifications:

• Continuous Drain Current Id: 5.6 A
• Current Id Max: 5.6 A
• Current Temperature: 25°C
• Device Marking: SI7414DN
• Drain Source Voltage Vds: 60 V
• External Depth: 5.15 mm
• External Length / Height: 1.07 mm
• External Width: 6.15 mm
• Fall Time tf: 12 ns
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 1.9 °C/W
• Mounting Type: SMD
• N-channel Gate Charge: 16nC
• Number of Pins: 8
• On State Resistance Max: 25 MOhm
• On State Resistance: 21 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 1.5 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 12 ns
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Turn Off Time: 30 ns
• Turn On Time: 15 ns
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• LICEFA - V11-7
• Roth Elektronik - RE932-01

Andere Namen:

SI7414DNT1GE3, SI7414DN T1 GE3