Datasheet SI7190DP-T1-GE3 - Vishay MOSFET, N CH, 250 V, 18.4 A, PPAK SO8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, N CH, 250 V, 18.4 A, PPAK SO8

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Docket:
New Product
Si7190DP
Vishay Siliconix
N-Channel 250-V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 18.4 A
• Drain Source Voltage Vds: 250 V
• Number of Pins: 8
• On State Resistance: 98 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 96 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Andere Namen:

SI7190DPT1GE3, SI7190DP T1 GE3