Datasheet SI4511DY-T1-GE3 - Vishay NPN & PNP MOSFET, SOIC — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: NPN & PNP MOSFET, SOIC

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Docket:
Si4511DY
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 20 RDS(on) () 0.0145 at VGS = 10 V 0.017 at VGS = 4.5 V 0.033 at VGS = - 4.5 V 0.050 at VGS = - 2.5 V ID (A) 9.6 8.6 - 6.2 -5

Specifications:

• Continuous Drain Current Id: 9.6 A
• Drain Source Voltage Vds: 20 V
• On Resistance Rds(on): 14.5 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 1.8 V
• Transistor Polarity: N and P Channel

RoHS: Y-Ex

Andere Namen:

SI4511DYT1GE3, SI4511DY T1 GE3