Datasheet SI4162DY-T1-GE3 - Vishay MOSFET, N CH, 30 V, 19.3 A, SO8 — Datenblatt

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Manufacturer: Vishay

Description: MOSFET, N CH, 30 V, 19.3 A, SO8

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Docket:
Si4162DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0079 at VGS = 10 V 0.010 at VGS = 4.5 V ID (A) 19.3a 17.1

Specifications:

• Current Id Max: 13.6 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On State Resistance: 6.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.5 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• CHEMTRONICS - CW8400
• EREM - 00SA
• MULTICORE (SOLDER) - 698840
• Roth Elektronik - RE932-01

Andere Namen:

SI4162DYT1GE3, SI4162DY T1 GE3