Datasheet SI2301CDS-T1-GE3 - Vishay MOSFET, P-CH, 20 V, 3.1 A, SOT23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: Vishay

Description: MOSFET, P-CH, 20 V, 3.1 A, SOT23

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Docket:
Si2301CDS
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.112 at VGS = - 4.5 V 0.142 at VGS = - 2.5 V ID (A)a - 3.1 3.3 nC - 2.7 Qg (Typ.)

Specifications:

• Current Id Max: -3.1 A
• Drain Source Voltage Vds: -20 V
• Number of Pins: 3
• On State Resistance: 90 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.6 W
• Rds(on) Test Voltage Vgs: -4.5 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vgs Max: 8 V

RoHS: Yes

Andere Namen:

SI2301CDST1GE3, SI2301CDS T1 GE3