Datasheet Texas Instruments CSD16325Q5 — Datenblatt

CSD16325Q5
www.ti.com SLPS218C – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16325Q5 FEATURES 1 2 PRODUCT SUMMARY Optimized for 5V Gate Drive
Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 18 nC Qgd Gate Charge Gate to Drain RDS(on)
VGS(th) Drain to Source On Resistance mΩ VGS = 4.5V 1.7 mΩ VGS = 8V 1.5 mΩ Threshold Voltage 1.1 Package Media CSD16325Q5 SON 5-mm × 6-mm
Plastic Package 13-Inch
Reel DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications
and optimized for 5V gate drive applications.
Top View
8 D S 2 7 D S 3 6 D G 4 5 D Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated 1 V ORDERING INFORMATION Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
Optimized for Synchronous FET Applications S nC
2.1 Device APPLICATIONS 3.5 …