Datasheet 2SK2607(F) - Toshiba MOSFET, N, TO-3P — Datenblatt

Detaillierte Beschreibung

Manufacturer: Toshiba

Description: MOSFET, N, TO-3P

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Specifications:

• Continuous Drain Current Id: 9 A
• Current Id Max: 9 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 800 V
• Full Power Rating Temperature: 25°C
• Lead Spacing: 5.45 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 1.2 Ohm
• Package / Case: TO-3P
• Power Dissipation Pd: 150 W
• Pulse Current Idm: 27 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-3P
• Transistor Polarity: N Channel
• Voltage Vds Typ: 800 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5