Datasheet 2SJ668(TE16L1,NQ) - Toshiba MOSFET P CH 5 A 60 V DPAK — Datenblatt

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Manufacturer: Toshiba

Description: MOSFET P CH 5 A 60 V DPAK

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Specifications:

• Continuous Drain Current Id: 5 A
• Current Id Max: -5 A
• Drain Source Voltage Vds: -60 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 170 MOhm
• Package / Case: PW-MOLD
• Power Dissipation: 20 W
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: D-PAK
• Transistor Polarity: P Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: -20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Toshiba - 2SJ668(TE16L1,NQ)

Andere Namen:

2SJ668(TE16L1NQ), 2SJ668(TE16L1 NQ)