Datasheet STS2DPFS20V - STMicroelectronics MOSFET, P, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: STMicroelectronics

Description: MOSFET, P, SO-8

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Docket:
P-CHANNEL 20V - 0.14 - 2.5A SO-8 2.7V-DRIVE STripFETTM II MOSFET PLUS SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 20 V SCHOTTKY IF(AV) 3A RDS(on) < 0.20 (@4.5V) < 0.25 (@2.7V) VRRM 30 V ID 2.5 A VF(MAX) 0.51 V
STS2DPFS20V
DESCRIPTION This product associates the latest low voltage StripFEToe in p-channel version to a low drop Schottky diode.

Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
SO-8

Specifications:

• Capacitance Ciss Typ: 315 pF
• Continuous Drain Current Id: 2.5 A
• Current Id Max: 2.5 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 8
• On State Resistance: 200 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 600 mV
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: 20 V
• Voltage Vds: 20 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Min: 0.6 V

RoHS: Yes