Datasheet STB30NM60ND - STMicroelectronics MOSFET N CH 600 V 25 A D2PAK — Datenblatt
Part Number: STB30NM60ND
Detaillierte Beschreibung
Manufacturer: STMicroelectronics
Description: MOSFET N CH 600 V 25 A D2PAK
Docket:
STx30NM60ND
N-channel 600 V, 0.11 , 25 A FDmeshTM II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
Type STB30NM60ND STI30NM60ND STF30NM60ND STP30NM60ND STW30NM60ND VDSS @TJ max RDS(on) max ID 25 A 25 A 25 A(1) 25 A 25 A
I PAK
Specifications:
- Continuous Drain Current Id: 12.5 A
- Current Id Max: 25 A
- Drain Source Voltage Vds: 600 V
- Mounting Type: SMD
- Number of Pins: 3
- On State Resistance: 110 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: D2-PAK
- Power Dissipation Pd: 190 W
- Rds(on) Test Voltage Vgs: 10 V
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: D2-PAK
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vds Typ: 600 V
- Voltage Vgs Max: 25 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes