Datasheet STB200N4F3 - STMicroelectronics MOSFET N CH 40 V 120 A D2PAK — Datenblatt

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Manufacturer: STMicroelectronics

Description: MOSFET N CH 40 V 120 A D2PAK

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Docket:
STP200N4F3 STB200N4F3
N-channel 40 V, 0.0025 120 A, D2PAK, TO-220 , planar STripFETTM Power MOSFET
Features
Type STB200N4F3 STP200N4F3 VDSS RDS(on) max 40 V 40 V <0.0031 <0.0035 ID Pw
120 A 300 W 120 A 300 W

Specifications:

• Continuous Drain Current Id: 60 A
• Current Id Max: 120 A
• Drain Source Voltage Vds: 40 V
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 2.5 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: D2-PAK
• Power Dissipation Pd: 300 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: D2-PAK
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 40 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes