Datasheet IRF630 - STMicroelectronics MOSFET, N, TO-220 — Datenblatt
Part Number: IRF630
Detaillierte Beschreibung
Manufacturer: STMicroelectronics
Description: MOSFET, N, TO-220
Docket:
IRF630 IRF630FP
N-channel 200V - 0.35 - 9A TO-220/TO-220FP Mesh overlayTM II Power MOSFET
General features
Type IRF630 IRF630FP
VDSS 200V 200V
Specifications:
- Alternate Case Style: SOT-78B
- Capacitance Ciss Typ: 540 pF
- Continuous Drain Current Id: 9 A
- Current Id Max: 9 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 200 V
- Full Power Rating Temperature: 25°C
- Lead Spacing: 2.54 mm
- Mounting Type: Through Hole
- Number of Pins: 3
- Number of Transistors: 1
- On State Resistance: 400 MOhm
- On State resistance @ Vgs = 10V: 400 MOhm
- Package / Case: TO-220
- Pin Configuration: A
- Pin Format: 1 g, (2+Tab)D, 3 s
- Power Dissipation Pd: 100 W
- Pulse Current Idm: 36 A
- Rds(on) Test Voltage Vgs: 10 V
- Reverse Recovery Time trr Typ: 170 ns
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-220
- Transistor Polarity: N Channel
- Voltage Vds Typ: 200 V
- Voltage Vgs Max: 3 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 4 V
- Voltage Vgs th Min: 2 V
RoHS: Y-Ex
Accessories:
- Fischer Elektronik - SK 145/37,5 STS-220
- Fischer Elektronik - SK 409/25,4 STS
- Fischer Elektronik - SK 409/50,8 STS
- Fischer Elektronik - WLK 5