Datasheet RSQ045N03TR - Rohm MOSFET, N, 30 V, 4.5 A — Datenblatt

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Manufacturer: Rohm

Description: MOSFET, N, 30 V, 4.5 A

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Docket:
RSQ045N03
Transistors
4V Drive Nch MOS FET
RSQ045N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Simulation Model

Specifications:

• Capacitance Ciss Typ: 520 pF
• Continuous Drain Current Id: 4.5 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 14 ns
• Mounting Type: SMD
• On State Resistance @ Vgs = 4.5V: 51 MOhm
• On State Resistance: 38 MOhm
• On State resistance @ Vgs = 10V: 38 MOhm
• Package / Case: TSMT6
• Pin Configuration: D(1+2+5+6), G(3), S(4)
• Power Dissipation Pd: 1.25 W
• Pulse Current Idm: 18 A
• Rise Time: 19 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: TSMT
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1 V

RoHS: Yes