Datasheet RHP020N06T100 - Rohm MOSFET, N, 60 V, 2.5 A — Datenblatt

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Manufacturer: Rohm

Description: MOSFET, N, 60 V, 2.5 A

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Docket:
RHP020N06
Transistors
4V Drive Nch MOS FET
RHP020N06
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Specifications:

• Capacitance Ciss Typ: 140 pF
• Continuous Drain Current Id: 2 A
• Drain Source Voltage Vds: 60 V
• Fall Time tf: 18 ns
• Mounting Type: SMD
• On State Resistance: 340 MOhm
• Package / Case: MPT3
• Power Dissipation Pd: 500 mW
• Pulse Current Idm: 8 A
• Rise Time: 10 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: MPT
• Transistor Polarity: N Channel
• Transistor Type: Protected MOSFET
• Voltage Vds Typ: 60 V
• Voltage Vgs Rds on Measurement: 4 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1 V

RoHS: Y-Ex