Datasheet QS6U22TR - Rohm MOSFET, P, VGS -2.5 V — Datenblatt

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Manufacturer: Rohm

Description: MOSFET, P, VGS -2.5 V

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Docket:
QS6U22
Transistors
2.5V Drive Pch+SBD MOS FET
QS6U22
Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions (Unit : mm)

Specifications:

• Capacitance Ciss Typ: 270 pF
• Continuous Drain Current Id: 1.5 A
• Drain Source Voltage Vds: 20 V
• Fall Time tf: 20 ns
• Mounting Type: SMD
• On State Resistance: 430 MOhm
• Package / Case: TSMT6
• Pin Configuration: 1(G), 2(S), 3(A), 4(K), 5(D)
• Power Dissipation Pd: 900 mW
• Pulse Current Idm: 6 A
• Rise Time: 12 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: -2 V
• Transistor Case Style: TSMT
• Transistor Polarity: P Channel
• Transistor Type: Protected MOSFET
• Voltage Vds Typ: -20 V
• Voltage Vgs Rds on Measurement: 2.5 V
• Voltage Vgs th Max: -2 V
• Voltage Vgs th Min: -0.7 V

RoHS: Yes