Datasheet QS5U13TR - Rohm MOSFET, N, VGS -2.5 V — Datenblatt

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Manufacturer: Rohm

Description: MOSFET, N, VGS -2.5 V

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Docket:
QS5U13
Transistors
2.5V Drive Nch+SBD MOS FET
QS5U13
Structure Silicon N-channel MOSFET Schottky Barrier DIODE External dimensions (Unit : mm)

Specifications:

• Capacitance Ciss Typ: 175 pF
• Continuous Drain Current Id: 2 A
• Current Id Max: 2 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 8 ns
• Mounting Type: SMD
• On State Resistance: 154 MOhm
• Package / Case: TSMT5
• Pin Configuration: 1(A), 2(S), 3(G), 4(D)
• Power Dissipation Pd: 700 mW
• Pulse Current Idm: 8 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Rise Time: 10 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: TSMT
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 2.5 V
• Voltage Vgs th Max: 1.5 V
• Voltage Vgs th Min: 500 mV

RoHS: Yes

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