Datasheet RHP030N03T100 - Rohm MOSFET, N, 30 V, 3 A — Datenblatt

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Manufacturer: Rohm

Description: MOSFET, N, 30 V, 3 A

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Docket:
RHP030N03
Transistors
4V Drive Nch MOSFET
RHP030N03
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)

Simulation Model

Specifications:

• Capacitance Ciss Typ: 160 pF
• Continuous Drain Current Id: 3 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 4.5 ns
• Mounting Type: SMD
• On State Resistance: 120 MOhm
• On State resistance @ Vgs = 10V: 120 MOhm
• Package / Case: MPT3
• Pin Configuration: S(1), G(2), D(3)
• Power Dissipation Pd: 500 mW
• Pulse Current Idm: 10 A
• Rise Time: 11 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: MPT
• Transistor Polarity: N Channel
• Transistor Type: Protected MOSFET
• Voltage Vds Typ: 30 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1 V

RoHS: Y-Ex