Datasheet QS6U24TR - Rohm MOSFET, P, VGS -4 V — Datenblatt

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Manufacturer: Rohm

Description: MOSFET, P, VGS -4 V

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Docket:
QS6U24
Transistor
4V Drive Pch+SBD MOS FET
QS6U24
Structure Silicon P-channel MOS FET Schottky Barrier DIODE External dimensions (Unit : mm)

Specifications:

• Capacitance Ciss Typ: 90 pF
• Continuous Drain Current Id: 1 A
• Drain Source Voltage Vds: 30 V
• Fall Time tf: 7 ns
• Mounting Type: SMD
• On State Resistance: 800 MOhm
• Package / Case: TSMT6
• Pin Configuration: 1(G), 2(S), 3(A), 4(K), 5(D)
• Power Dissipation Pd: 900 mW
• Pulse Current Idm: 2 A
• Rise Time: 7 ns
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: -2.5 V
• Transistor Case Style: TSMT
• Transistor Polarity: P Channel
• Transistor Type: Protected MOSFET
• Voltage Vds Typ: -30 V
• Voltage Vgs Rds on Measurement: 4 V
• Voltage Vgs th Max: -2.5 V
• Voltage Vgs th Min: -1 V

RoHS: Yes