Datasheet RSS100N03FU6TB - Rohm MOSFET, N, 30 V, 10 A — Datenblatt

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Manufacturer: Rohm

Description: MOSFET, N, 30 V, 10 A

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Docket:
RSS100N03
Transistor
4V Drive Nch MOS FET
RSS100N03
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Specifications:

• Continuous Drain Current Id: 10 A
• Current Id Max: 10 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 8
• On State Resistance @ Vgs = 4.5V: 12.5 MOhm
• On State Resistance: 9.5 MOhm
• On State resistance @ Vgs = 10V: 9.5 MOhm
• Package / Case: SOP-8
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 40 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: SOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

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