Datasheet RK3055ETL - Rohm MOSFET — Datenblatt

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Manufacturer: Rohm

Description: MOSFET

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Docket:
RK3055E
Transistors
10V Drive Nch MOSFET
RK3055E
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)

Simulation Model

Specifications:

• Continuous Drain Current Id: 4 A
• Current Id Max: 8 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 150 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: CPT3
• Power Dissipation Pd: 20 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: CPT
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes