Datasheet NTR2101PT1G - ON Semiconductor MOSFET — Datenblatt

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: MOSFET

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Simulation Model

Specifications:

• Continuous Drain Current, Id: 3.7 A
• Drain Source Voltage, Vds: -8 V
• On Resistance, Rds(on): 0.052 Ohm
• Power Dissipation, Pd: 960 mW
• Rds(on) Test Voltage, Vgs: -4.5 V
• Threshold Voltage, Vgs Typ: -1 V
• Transistor Polarity: P Channel

RoHS: Yes