Datasheet NID5003NT4G - ON Semiconductor SMART MOSFET, N, 42 V, 1.3 W, D-PAK — Datenblatt

ON Semiconductor NID5003NT4G

Part Number: NID5003NT4G

Detaillierte Beschreibung

Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 42 V, 1.3 W, D-PAK

Docket:
NID5003N
Preferred Device
Self-Protected FET with Temperature and Current Limit
42 V, 20 A, Single N-Channel, DPAK
HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features.

Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp.

Specifications:

Avalanche Single Pulse Energy Eas: 400mJ
Continuous Drain Current Id: 20 A
Current Id Max: 20 A
Drain Source Voltage Vds: 42 V
Mounting Type: SMD
Number of Pins: 3
On State Resistance: 42 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: DPAK
Pin Configuration: 1(G), 2(D), 3(S)
Power Dissipation Pd: 1.3 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (15-Dec-2010)
Shutdown Temperature: 175°C
Threshold Voltage Vgs Typ: 1.7 V
Transistor Case Style: D-PAK
Transistor Polarity: N Channel
Voltage Vds Typ: 42 V
Voltage Vgs Max: 14 V DC
Voltage Vgs Rds on Measurement: 10 V
Voltage Vgs th Max: 2.2 V
Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

Fischer Elektronik - FK 244 08 D PAK
Fischer Elektronik - FK 244 13 D PAK
Fischer Elektronik - WLK 5