Datasheet BUZ900 - Semelab MOSFET, N, TO-3 — Datenblatt

Semelab BUZ900

Part Number: BUZ900

Detaillierte Beschreibung

Manufacturer: Semelab

Description: MOSFET, N, TO-3

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Specifications:

  • Alternate Case Style: TO-204AA
  • Continuous Drain Current Id: 8 A
  • Current Id Max: 8 A
  • Current Temperature: 25°C
  • Device Marking: BUZ900
  • Drain Source Voltage Vds: 160 V
  • Full Power Rating Temperature: 25°C
  • Mounting Type: Through Hole
  • Number of Pins: 2
  • Number of Transistors: 1
  • On State Resistance: 1.5 Ohm
  • Package / Case: TO-3
  • Power Dissipation Pd: 125 W
  • Threshold Voltage Vgs Typ: 1.5 V
  • Transistor Case Style: TO-3
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 160 V
  • Voltage Vgs Max: 1.5 V

RoHS: Yes

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