Datasheet 2SK1317-E - Renesas MOSFET, N, TO-3P — Datenblatt

Detaillierte Beschreibung

Manufacturer: Renesas

Description: MOSFET, N, TO-3P

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Docket:
2SK1317
Silicon N Channel MOS FET
REJ03G0929-0200 (Previous: ADE-208-1268) Rev.2.00 Sep 07, 2005
Application
High speed power switching

Specifications:

• Continuous Drain Current Id: 2.5 A
• Current Id Max: 2.5 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 1.5 kV
• Full Power Rating Temperature: 25°C
• Lead Spacing: 5.45 mm
• Mounting Type: Through Hole
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance: 12 Ohm
• Package / Case: TO-3P
• Power Dissipation Pd: 100 W
• Pulse Current Idm: 7 A
• Rds(on) Test Voltage Vgs: 15 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-3P
• Transistor Polarity: N Channel
• Voltage Vds Typ: 1.5 kV
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 15 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5
• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Andere Namen:

2SK1317E, 2SK1317 E