Datasheet PHB101NQ03LT - NXP MOSFET, N 30 V D2-PAK — Datenblatt

NXP PHB101NQ03LT

Part Number: PHB101NQ03LT

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N 30 V D2-PAK

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Docket:
PHB/PHD101NQ03LT
TrenchMOSTM logic level FET
Rev.

02 -- 25 February 2003 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHB101NQ03LT in SOT404 (D2-PAK) PHD101NQ03LT in SOT428 (D-PAK).

Specifications:

  • Alternate Case Style: D2-PAK
  • Continuous Drain Current Id: 75 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • Full Power Rating Temperature: 25°C
  • Mounting Type: SMD
  • On State Resistance: 5.8 MOhm
  • Package / Case: D2-PAK
  • Power Dissipation Pd: 166 W
  • Pulse Current Idm: 240 A
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: D2-PAK
  • Transistor Polarity: N Channel
  • Voltage Vds: 30 V
  • Voltage Vgs th Max: 2.5 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 244 08 D2 PAK
  • Fischer Elektronik - FK 244 13 D2 PAK
  • Fischer Elektronik - WLK 5