Datasheet BSP100,135 - NXP MOSFET, N CH, 30 V, 6 A, 4-SOT-223 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH, 30 V, 6 A, 4-SOT-223

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Docket:
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
FEATURES
· 'Trench' technology · Low on-state resistance · Fast switching · High thermal cycling performance · Low thermal resistance

Specifications:

• Continuous Drain Current Id: 6 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 80 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 2 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

BSP100135, BSP100 135