Datasheet BSH111,215 - NXP MOSFET, N CH, 55 V, 335 mA, 3-SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH, 55 V, 335 mA, 3-SOT-23

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Docket:
BSH111
N-channel enhancement mode field-effect transistor
Rev.

02 -- 26 April 2002
M3D088
Product data

Specifications:

• Continuous Drain Current Id: 335 mA
• Drain Source Voltage Vds: 55 V
• On Resistance Rds(on): 2.3 Ohm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1 V
• Transistor Polarity: N Channel

RoHS: Yes

Andere Namen:

BSH111215, BSH111 215