Datasheet SI2304DS,215 - NXP MOSFET, N CH, 30 V, 1.7 A, SOT23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH, 30 V, 1.7 A, SOT23

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Docket:
SI2304DS
N-channel enhancement mode field-effect transistor
Rev.

01 -- 17 August 2001
M3D088
Product data

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 1.7 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 117 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 830 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 2 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

SI2304DS215, SI2304DS 215