Datasheet PMN28UN,135 - NXP MOSFET N-CH 12 V 5.7 A SOT457 — Datenblatt
Part Number: PMN28UN,135
Detaillierte Beschreibung
Manufacturer: NXP
Description: MOSFET N-CH 12 V 5.7 A SOT457
Docket:
PMN28UN
TrenchMOSTM ultra low level FET
M3D302
Rev.
01 -- 27 September 2002
Product data
Specifications:
- Continuous Drain Current Id: 2 A
- Current Id Max: 5.7 A
- Drain Source Voltage Vds: 12 V
- Mounting Type: SMD
- Number of Pins: 6
- On State Resistance: 34 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-457
- Power Dissipation Pd: 1.75 W
- Rds(on) Test Voltage Vgs: 4.5 V
- SVHC: No SVHC (18-Jun-2010)
- Threshold Voltage Vgs Typ: 700 mV
- Transistor Case Style: SOT-457
- Transistor Polarity: N Channel
- Transistor Type: Enhancement
- Voltage Vds Typ: 12 V
- Voltage Vgs Max: 700 mV
- Voltage Vgs Rds on Measurement: 4.5 V
RoHS: Yes
Andere Namen:
PMN28UN135, PMN28UN 135