Datasheet PHK12NQ10T - NXP MOSFET, N, SO-8 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N, SO-8

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Docket:
PHK12NQ10T
TrenchMOSTM standard level FET
M3D315
Rev.

01 -- 15 September 2003
Product data

Specifications:

• Continuous Drain Current Id: 11.6 A
• Current Id Max: 11.6 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 1
• On State Resistance: 28 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Power Dissipation Pd: 8.9 W
• Pulse Current Idm: 48 A
• Rds(on) Test Voltage Vgs: 10 V
• Row Pitch: 6.3 mm
• SMD Marking: PHK12NQ10T
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Dow Corning - 2265931
• Fischer Elektronik - ICK SMD A 5 SA
• Fischer Elektronik - WLK 5