Datasheet PH2925U - NXP MOSFET, N, 25 V, LFPAK — Datenblatt

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Manufacturer: NXP

Description: MOSFET, N, 25 V, LFPAK

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Docket:
PH2925U
N-channel TrenchMOS ultra low level FET
Rev.

04 -- 24 February 2009 Product data sheet
1. Product profile
1.1 General description

Simulation Model

Specifications:

• Continuous Drain Current Id: 100 A
• Current Id Max: 100 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 25 V
• External Depth: 6.2 mm
• External Length / Height: 1.2 mm
• External Width: 5 mm
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 92nC
• Number of Pins: 4
• Number of Transistors: 1
• On State Resistance @ Vgs = 4.5V: 2.3 MOhm
• On State Resistance Max: 2.9 MOhm
• On State Resistance: 2.3 MOhm
• Operating Temperature Range: -55°C to +150пїЅпїЅC
• Package / Case: SOT-669
• Power Dissipation Pd: 62.5 W
• Pulse Current Idm: 300 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: SOT-669
• Transistor Polarity: N Channel
• Voltage Vds Typ: 25 V
• Voltage Vgs Max: 10 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Min: 0.45 V

RoHS: Yes