Datasheet BUK98180-100A - NXP MOSFET, N CH 100 V 4.6 A SOT223 — Datenblatt

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Manufacturer: NXP

Description: MOSFET, N CH 100 V 4.6 A SOT223

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Docket:
BUK98180-100A
N-channel TrenchMOS logic level FET
Rev.

03 -- 3 June 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: 4.6 A
• Current Id Max: 4.6 A
• Drain Source Voltage Vds: 100 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 173 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation: 8 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 10 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

BUK98180100A, BUK98180 100A