Datasheet BUK7880-55 - NXP MOSFET, N CH 55 V SOT223 — Datenblatt

NXP BUK7880-55

Part Number: BUK7880-55

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH 55 V SOT223

Docket:
Philips Semiconductors
Product specification
TrenchMOSTM transistor Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting.

Using 'trench' technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications.

Specifications:

Continuous Drain Current Id: 7.5 A
Current Id Max: 7.5 A
Drain Source Voltage Vds: 55 V
Mounting Type: SMD
Number of Pins: 3
On Resistance Rds(on): 80 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: SOT-223
Power Dissipation: 1.8 W
Rds(on) Test Voltage Vgs: 10 V
SVHC: No SVHC (19-Dec-2011)
Threshold Voltage Vgs Typ: 3 V
Transistor Case Style: SOT-223
Transistor Polarity: N Channel
Transistor Type: Enhancement
Voltage Vds Typ: 55 V
Voltage Vgs Max: 16 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

BUK788055, BUK7880 55