Datasheet BSS192,115 - NXP MOSFET P-CH 240 V 0.2 A SOT89 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET P-CH 240 V 0.2 A SOT89

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Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSS192 P-channel enhancement mode vertical D-MOS transistor

Specifications:

• Continuous Drain Current Id: -200 mA
• Current Id Max: -200 mA
• Drain Source Voltage Vds: -240 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 12 Ohm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-89
• Power Dissipation: 1 W
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -2.8 V
• Transistor Case Style: SOT-89
• Transistor Polarity: P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: -240 V
• Voltage Vgs Max: -2.8 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Andere Namen:

BSS192115, BSS192 115