Datasheet BSH205 - NXP MOSFET, P, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, P, SOT-23

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Docket:
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
FEATURES
· Very low threshold voltage · Fast switching · Logic level compatible · Subminiature surface mount package

Specifications:

• Continuous Drain Current Id: 750 mA
• Current Id Max: -750 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: -12 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 500 MOhm
• On State Resistance: 400 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 417 mW
• Power Dissipation Ptot Max: 417 mW
• Pulse Current Idm: 3 A
• Rds(on) Test Voltage Vgs: -4.5 V
• SVHC: No SVHC (18-Jun-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: 680 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: 12 V
• Voltage Vgs Max: -8 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th P Channel Min: 0.68 V

RoHS: Yes

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