Datasheet BSH201,215 - NXP MOSFET P-CH 60 V 300 mA SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET P-CH 60 V 300 mA SOT-23

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Docket:
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
FEATURES
· Low threshold voltage · Fast switching · Logic level compatible · Subminiature surface mount package

Specifications:

• Continuous Drain Current Id: -160 mA
• Current Id Max: -300 mA
• Drain Source Voltage Vds: -60 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 2.5 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 417 mW
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: -1.9 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: 1.9 V

RoHS: Yes

Andere Namen:

BSH201215, BSH201 215