Datasheet BSH121,135 - NXP MOSFET, N CH, 55 V, 300 mA, SOT323 — Datenblatt

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Manufacturer: NXP

Description: MOSFET, N CH, 55 V, 300 mA, SOT323

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Docket:
BSH121
N-channel enhancement mode field-effect transistor
Rev.

01 -- 14 August 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: BSH121 in SOT323.

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 300 mA
• Drain Source Voltage Vds: 55 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 4 Ohm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-323
• Power Dissipation: 700 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-323
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 75 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Andere Namen:

BSH121135, BSH121 135