Datasheet BSH114,215 - NXP MOSFET, N CH, 100 V, 0.85 A, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N CH, 100 V, 0.85 A, SOT-23

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Docket:
BSH114
N-channel enhancement mode field effect transistor
Rev.

01 -- 09 November 2000
M3D088
Product specification

Specifications:

• Continuous Drain Current Id: 500 mA
• Current Id Max: 850 mA
• Drain Source Voltage Vds: 100 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 500 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 830 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 130 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Andere Namen:

BSH114215, BSH114 215