Datasheet BSH111 - NXP MOSFET, N, SOT-23 — Datenblatt

Detaillierte Beschreibung

Manufacturer: NXP

Description: MOSFET, N, SOT-23

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Docket:
BSH111
N-channel enhancement mode field-effect transistor
Rev.

02 -- 26 April 2002
M3D088
Product data

Specifications:

• Continuous Drain Current Id: 335 mA
• Current Id Max: 335 mA
• Drain Source Voltage Vds: 55 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 2.3 Ohm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 830 mW
• Pulse Current Idm: 1.3 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 55 V
• Voltage Vgs Max: 10 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1.3 V

RoHS: Yes